specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general el ectronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 42211 sy/60210 sy 20100527-s00001/90209 sy no.a1450-1/5 lb1973m overview the lb1973m is a two-channel h-bridge driver that supports for low saturation draive operation. it is optimal for h-bridge drive of stepping motors (af and zoom) in portable equipment such as camera cell phones. features ? two-channel h-bridge driver ? the range of the operation voltage is wide.(1.8v to 7.5v) ? small package : mfp10s(225mil) ? built-in thermal protection specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc max -0.3 to +8.0 v output voltage v out max -0.3 to v cc +v sf v input voltage v in max cont, in -0.3 to +8.0 v ground pin source current i gnd per channel 1000 ma pd max1 for unit 350 mw allowable power dissipation pd max2 mounted on a circuit board.* 870 mw operating temperature topr -20 to +85 c storage temperature tstg -40 to +150 c * mounted on a specified board : 114.3mm 76.1mm 1.6mm, glass epoxy allowable operating ratings at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc 1.8 to 7.5 v high-level input voltage v ih 1.3 to 7.5 v low-level input voltage v il -0.3 to +0.5 v monolithic digital ic two-channel h-bridge driver orderin g numbe r : ena1450b
lb1973m no.a1450-2/5 electrical characteristics at ta = 25c, v cc = 1.9v ratings parameter symbol conditions min typ max unit i cco 1 v cc = 1.9v,in1 to in4 = 0v 0.01 1 a i cco 2 v cc = 3v,in1 to in4 = 0v 0.01 1 a i cc 1 in1 = 1.9v,in2 to in4 = 0v 18 25 ma source current i cc 2 in1 = 3v,in2 to in4 = 0v,v cc = 3v 19 26 ma v out 11 i out = 270ma,v cc = 1.9v to 3.6v,v out = upper tr and under tr in1 = 1.3v,in2 to in4 = 0v supplementation: standard similar as for in2 to in4 = 1.3v 0.2 0.3 v output saturation voltage1 (single connection) v out 12 i out = 350ma,v cc = 1.9v to 3.6v,v out = upper tr and under tr in1 = 1.3v,in2 to in4 = 0v supplementation: standard similar as for in2 to in4 = 1.3v 0.25 0.4 v v out 21 i out = 270ma,v cc = 1.9v to 3.6v,v out = upper tr and under tr out1-3,out2-4 short. in1 and in3 = 1.3v,in2 and in4 = 0v supplementation: standard similar as for in2 and in4 = 1.3v 0.12 0.2 v output saturation voltage2 (parallel connection) v out 22 i out = 500ma,v cc = 1.9v to 3.6v,v out = upper tr and under tr out1-3,out2-4 short. in1 and in3 = 1.3v,in2 and in4 = 0v supplementation: standard similar as for in2 and in4 = 1.3v 0.2 0.35 v input current i in v in = 1.9v 32 70 a themal shutdown operation temperature ttsd 140 c temperature hysteresis width ? t 20 c spark killer diode reverse current i s (leak) v cc -out = 8v,v in = 0v 10 a forword voltage v sf i out = 400ma,v in = 0v 1.7 v package dimensions unit : mm (typ) 3086b -20 0 20 40 60 80 100 85 0 0.2 0.4 0.6 0.8 1.0 pd max -- ta 0.45 0.18 0.35 0.87 allowable power dissipation,pd max - w ambient temperature, ta -- c mounted on a specified board : 114.3mm x 76.1mm x 1.6mm glass epoxy sanyo : mfp10s(225mil) 1 10 5 6 (0.5) 1.7max 1.0 0.35 5.0 0.15 6.4 (1.5) 0.1 4.4 0.63
lb1973m no.a1450-3/5 pin assignment truth table input output in1 in2 in3 in4 out1 out2 out3 out4 mode low low low low off off off off standby mode high low high low channel 1, forward low high - - low high - - channel 1, reverse high low high low channel 2, forward - - low high - - low high channel 2, reverse high high - - - - high high the logic output for the first high-level input is produced. block diagram out1 out2 out3 out4 in2 gnd in1 in3 in4 v cc (top view) 1 2 3 4 5 10 9 8 7 6 v cc gnd in1 in2 in3 in4 out1 out2 30k 100k 30k 100k 30k 100k 30k 100k control block circuit thermal shutdown circuit out3 out4
lb1973m no.a1450-4/5 timing chart (1) stepper motor timing chart timing chart for 2-phase drive (2) timing chart for 1-2 phase drive (fastdecay mode) in1 in3 i in2 in4 channel 1 output mode forward standby standby reverse forward standby standby forward reverse forward channel 2 output mode forward reverse forward reverse in1 in3 i in2 in4 off off off off channel 1 output mode channel 2 output mode forward standby standby reverse forward standby standby forward reverse forward
lb1973m ps no.a1450-5/5 sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probabi lity. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of april, 2011. specifications and information herein are subject to change without notice. 0 0.01 0.02 0.03 0.04 0.05 0.06 0.00e+00 1.80e-04 2.00e-05 4.00e-05 6.00e-05 8.00e-05 1.00e-04 1.20e-04 1.40e-04 1.60e-04 16 2345 1234567 7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.05 0.1 0.2 0.15 0.25 0.3 0.4 0.35 0.45 0 0.2 0.1 0.4 0.3 0.6 0.5 0.8 0.9 0.7 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.9 0.3 10 1 08 i cc -- v cc i in -- v in vsat -- i o vsat -- i o v cc = 1.9v ta = 25 c v cc = 1.9v in4 in3 out24 - out13 out13 - out24 in1 in2 current drain , i cc - a supply voltage , v cc - v 2ch drive 1ch drive input current , i in - a input voltage , v in - v output current , i o - a output current , i o - a saturation voltage , vsat - v (single connection) (parallel connection)
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